The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 09, 2002

Filed:

Nov. 13, 1997
Applicant:
Inventors:

Richard B. Merrill, Woodside, CA (US);

Richard M. Turner, Menlo Park, CA (US);

Carver A. Mead, Cupertino, CA (US);

Richard F. Lyon, Los Altos, CA (US);

Assignee:

Foveon, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 3/14 ;
U.S. Cl.
CPC ...
H04N 3/14 ;
Abstract

A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circuit node. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the circuit node. A plurality of storage pixel sensors are disposed in an array.


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