The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
May. 12, 1999
Diana Cynthia Ulrich, Oxford, GB;
Paul Bonnett, Littlemore, GB;
Michael John Towler, Botley, GB;
Masaaki Kabe, Kashiwa, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Reduction of ionic memory effect in ferroelectric liquid crystal material. A method of reducing the effects of ionic memory in a ferroelectric liquid crystal (FLC) material to which a switching pulse is applied comprises the steps of: a) adding an ionic dopant to the FLC material, the ionic dopant providing ions having a fast response to an applied electric field; and b) following said switching pulse by a first pulse of opposite polarity to said switching pulse, in such a way that said first pulse reduces any ionic reversal field created by said switching pulse, but does not destabilize the state to which the FLC material is switched by said switching pulse.