The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Aug. 16, 2001
Ju-Il Lee, Ichon, KR;
Hyundai Electronics Industries Co., Ltd., Kyungki-Do, KR;
Abstract
A CMOS image sensor fabrication method that is capable of preventing a surface of a metal line from being damaged or contaminated is provided. The formed CMOS image sensor includes: a semiconductor structure, wherein the semiconductor structure includes a unit pixel area and a pad area; a metal line formed on the pad area, wherein a portion of the metal line is exposed; a passivation layer formed on the unit pixel area and on the metal line such that the exposed portion is left exposed; a planarized photoresist formed on a portion of the passivation layer; a micro-lens formed on a portion of the planarized photoresist; and an oxide layer formed on the entire formed structure such that the exposed portion is left exposed.