The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Dec. 01, 1999
Applicant:
Inventors:
Yukiya Kawakami, Tokyo, JP;
Shigeru Tohyama, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7768 ; H01L 2/7148 ;
U.S. Cl.
CPC ...
H01L 2/7768 ; H01L 2/7148 ;
Abstract
A charge coupled device has an n-type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter, wherein at least one p-type local impurity region is formed in such a manner as to form a p-n junction together with the n-type charge accumulating layer and the n-type semiconductor substrate, thereby increasing the amount of signal charge accumulated in each unit cell without sacrifice of the pulse height of the pulse signal for the substrate shutter.