The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Sep. 13, 2000
Hiroyuki Doi, Kyoto, JP;
Takao Yamaguchi, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
After forming a control gate electrode, an interelectrode insulating film and a floating gate electrode of a nonvolatile memory device in a memory region with allowing a conducting film to remain in a logic region, an insulating film for implant protection is formed on a substrate, and ion implantation is carried out to form a source/drain diffusion layer of the nonvolatile memory device. Then, after removing the insulating film for implant protection, the conducting film is patterned into a gate electrode of a logic device. Thereafter, impurity ion implantation is carried out with the gate electrode used as a mask so as to form an LDD diffusion layer of the logic device. At this point, since the insulating film for implant protection has already been removed from the logic region, a shallow PN junction can be formed, resulting in realizing a logic device suitable to refinement.