The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Dec. 09, 1998
Applicant:
Inventors:
Hong-jae Shin, Seoul, KR;
Ju-seon Goo, Kyungki-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A method for planarizing an interlayer dielectric layer formed on a semiconductor substrate having a step, using wet etch, by depositing first and second layers on the semiconductor substrate and selectively curing the second layer in the lower area using electron beams (E-beams). The second layer, e.g., an SOG layer formed of HSQ, has a lower etch rate during the wet etch in the cured area, to thereby easily planarize the substrate of the interlayer dielectric layer.