The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Dec. 09, 1999
Applicant:
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 ;
U.S. Cl.
CPC ...
B44C 1/22 ;
Abstract
A magnetic gap is formed to be vertical to the film forming surface of a substrate with high accuracy by a simple method. The method comprises a non-magnetic film forming step of forming a non-magnetic film made of the non-magnetic material on the substrate, a high selectivity film forming step of forming a high selectivity film made of a material which has a higher selectivity ratio with respect to reactive ion etching than the non-magnetic material, on the non-magnetic film formed, a patterning step of patterning the high-selectivity film into a predetermined shape, and an etching step of etching the non-magnetic film by reactive ion etching, using the high selectivity film as a mask.