The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2002

Filed:

Mar. 16, 1999
Applicant:
Inventors:

Toshiki Seshita, Kanagawa-Ken, JP;

Mitsuo Konno, Kanagawa-Ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/334 ; H01L 2/710 ;
U.S. Cl.
CPC ...
H01L 2/334 ; H01L 2/710 ;
Abstract

A high-frequency semiconductor device includes a microwave monolithic integrated circuit having first and second passive element sections each having at least one passive element as well as an FET. The FET has a gate connected to the first passive element section and a drain connected to the second passive element section. A bed configured as a plate of a conductive member is provided for mounting thereon the microwave monolithic integrated circuit. The bed has at least one opening or hole formed therethrough. The hole of the bed is provided at a specified position of the bed so as to underlie either one the first or second passive element section. With such an arrangement, it becomes possible to obtain enhanced performance.


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