The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Dec. 15, 2000
Semiconductor memory of the dynamic random access type (dram) and method for actuating a memory cell
Helmut Fischer, Taufkirchen, DE;
Thoralf Grätz, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor memory of the dynamic random access type (DRAM) includes memory cells combined in addressable units of bit lines and word lines. Each memory cell array is allocated a row decoder for selection of one of the word lines and a column decoder for selection of one of the bit lines, in the memory cell array. The row decoder is connected to a row selection signal line for transmission of a selection signal. The row decoder is disposed at an edge of the memory cell array allocated thereto, and between the memory cell arrays. The column decoder is connected to the row selection signal line. The column decoder is disposed on the outer edge area both of the memory cell array allocated thereto and of the memory field. A method for actuating a memory cell in such a semiconductor memory is also provided.