The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Apr. 28, 2000
Raffaele Zambrano, Viagrande, IT;
Chiara Corvasce, Catania, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
Presented is a ferroelectric non-volatile memory cell in a semiconductor substrate that has a MOS device connected in parallel to a ferroelectric capacitor. The MOS device has first and second conduction terminals and is covered with an insulating layer. The ferroelectric capacitor has a lower electrode formed on the insulating layer above the first conduction terminals and are electrically coupled to them. The lower electrode of the ferroelectric capacitor is covered with a layer of ferroelectric material and coupled capacitively to an upper electrode. The upper electrode is formed above the second conduction terminals and are electrically connected thereto, and extends over the ferroelectric material to at least partially overlap the lower electrode. Also presented is a non-volatile memory matrix that includes a plurality of the ferroelectric memory cells that are organized into rows and columns.