The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Aug. 07, 1998
Corning Lasertron, Inc., Bedford, MA (US);
Abstract
An electro-optical, ridge-waveguide device and method for its fabrication utilizes a polyimide ridge-protection layer, which provides good ridge protection/planarization while minimizing parasitic capacitance. A silicon oxide interlayer is used between a metal contact layer and the polyimide. This interlayer facilitates the adhesion between the metal contact layer and the underlying device since good adhesion can be obtained between the silicon oxide layer and the polyimide layer and between the metal layer and silicon oxide layer. Preferably, the polyimide is roughened to increase the surface area contact between the polyimide layer and silicon oxide layer to further increase adhesion and thus the pull-off force required to separate the metal contact layer from the device. While such roughening can be achieved through plasma etching, in a preferred embodiment, the polyimide layer is roughened by patterned etching. Specifically, a patterned photoresist is used as a etch-protection layer to form a series of wells in the polyimide layer that have a pitch between 1 and 20 microns.