The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Oct. 12, 1999
Andrej Litwin, Danderyd, SE;
Ted Johansson, Djursholm, SE;
Telefonaktiebolaget LM Ericsson (publ), Stockholm, SE;
Abstract
The present invention relates to a method and device for interconnecting radio frequency power SiC field effect transistors. To improve the parasitic source inductance advantage is taken of the small size of the transistors, wherein the bonding pads are placed on both sides of the die in such a way that most of the source bonding wires ( ) go perpendicularly to the gate and drain bonding wires ( ). Multiple bonding wires can be connected to the source bonding pads, reducing the source inductance. An additional advantage comes from such arrangement by reducing the mutual inductance between source/gate and between source/drain due to the orthogonal wire placement.