The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Mar. 23, 1999
Kyoko Hirai, Hashima, JP;
Yushi Jinno, Gifu, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
In a thin film transistor (TFT), a gate electrode, a gate insulating film, a poly silicon film having a channel, a stopper insulating film on the channel, an interlayer insulating film, a source electrode and a drain electrode, a planarizating film, and a transparent electrode are formed on an insulating substrate in that order. In this TFT, either of the source electrode and the drain electrode or the transparent electrode is formed on the interlayer insulating film or the planarizating film spreading over the channel. This will restrain the occurrence of a back channel resulting from polarization in the planarizating film or the interlayer insulating film in the TFT caused by water or impurity ions, or variation of a threshold voltage of the TFT when a back channel occurs. As a result, TFTs and liquid crystal displays which have few defects and can perform display having uniform brightness all over can be provided.