The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Nov. 19, 1999
Applicant:
Inventors:
James Anthony Misewich, Peekskill, NY (US);
Alejandro Gabriel Schrott, New York, NY (US);
Bruce Albert Scott, Tisbury, MA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 1/912 ; H01L 3/1119 ; H01L 3/1062 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1113 ;
U.S. Cl.
CPC ...
H01L 1/912 ; H01L 3/1119 ; H01L 3/1062 ; H01L 2/976 ; H01L 2/994 ; H01L 3/1113 ;
Abstract
A Field effect transistor semiconductor switch in which the channel of same is made from materials having an electrical conductivity which can undergo an insulator-metal transistor (i.e., Mott transition) upon application of an electric field. The channel contains the Mott material in which the charge carriers, either holes or electrons, are strongly correlated. The Mott transition determines the metal-insulator switching and is demonstrated to be controlled by an external gate electrode.