The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jun. 03, 1999
Isik C. Kizilyalli, Orlando, FL (US);
Sailesh M. Merchant, Orlando, FL (US);
Joseph R. Radosevich, Orlando, FL (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
The present invention provides a method of forming a metal stack structure over a substrate of a semiconductor device, comprising: (a) forming a first metal layer over the substrate, (b) forming a tungsten silicide nitride layer over the first metal layer, (c) forming a second metal layer over the tungsten silicide nitride layer, and (d) annealing the metal stack structure at a diffusion temperature. The tungsten silicide nitride layer inhibits diffusion of the metal in the metal stack. In one embodiment, the annealing is performed in the presence of a forming gas mixture comprising deuterium. In one particularly advantageous embodiment, the metal stack is formed in a contact opening or via. In yet other embodiments, the first metal layer may be a stack layer of titanium and titanium nitride and the second metal layer may be aluminum or copper.