The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Mar. 05, 1998
Chungpin Liao, Taichung, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
A method of forming a silicon-on-insulator device having a buried layer is described. Ions are implanted into a first semiconductor substrate where it is not covered by a photoresist mask to form implanted regions. Alternatively, a silicide layer over the first semiconductor substrate is patterned to leave silicide regions. A first oxide layer is formed overlying the first semiconductor substrate whereby the implanted regions or the silicide regions form the buried layer structure. A second oxide layer is formed overlying a second semiconductor substrate. The first and second oxide layers are bonded together to form the wafer, using either the bond and etch back or the Unibond™ method to complete formation of an silicon-on-insulator wafer having a buried layer structure in the fabrication of an integrated circuit.