The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
May. 10, 2001
Applicant:
Inventors:
Assignee:
Hyundai Electronics Industries, Co., Ltd., Kyungki-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method of manufacturing a capacitor in a semiconductor device wherein a first a Ru film used as a lower electrode is deposited by an LPCVD method, a mixed plasma process of Ar and H is performed, and a second Ru film is deposited by an LPCVD method, thus improving the surface roughness of the Ru film. The method can obtain a high capacitance and a low leakage current in a capacitor using a Ta O film as a dielectric film.
Kim, Kyong. (2002). Method of manufacturing a capacitor in a semiconductor device (U.S. Patent No. 6365487). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6365487
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile