The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Jun. 22, 2000
Applicant:
Inventors:
Jeffrey M. Finder, Chandler, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
Bich-Yen Nguyen, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A transistor ( ) and method of making an integrated circuit ( ) uses a chromium based sacrificial gate ( A) to align, dope and activate source and drain portions ( ) of the transistor. The transistor is subjected to a high temperature to activate the source and drain, which would damage a high permittivity gate dielectric. The sacrificial gate is removed by etching with ceric ammonia nitrate. A high permittivity gate dielectric ( ) and a final gate electrode ( ) are formed over a channel ( ) of the transistor. Electrodes ( ) are formed for coupling to the source and drain.