The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Dec. 29, 2000
Applicant:
Inventor:
Tatsuro Maeda, Ibaraki, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A diffusion source included a diffusion source layer is diffused into both a source area and a drain area in a self-aligning manner by using heat treatment, and after the self-aligning thermal diffusion, a gate insulating film and a metal gate electrode are formed over both the gate area and the thermally diffused diffusion source layer. Then, a lift-off operation is performed to form a gate stacking structure having the gate insulating film and the gate electrode formed only according to the gate area.