The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Aug. 26, 1998
Applicant:
Inventors:
Sailesh Chittipeddi, Allentown, PA (US);
Michael James Kelly, Orefield, PA (US);
Assignee:
Agere Systems Guardian Corp., Orlando, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. The trenches are formed using a stop layer so that the depth of the trenches may be precisely controlled. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.
Chittipeddi, Sailesh. (2002). Method for forming dual-polysilicon structures using a built-in stop layer (U.S. Patent No. 6365469). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6365469
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile