The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Dec. 13, 1999
Applicant:
Inventors:
Hirotake Yamada, Anjo, JP;
Makoto Murai, Nagoya, JP;
Hiroshi Furukubo, Ichinomiya, JP;
Yasufumi Aihara, California, CA (US);
Tsuneaki Ohashi, Ogaki, JP;
Assignee:
NGK Insulators, Ltd., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/1369 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/1369 ;
Abstract
A method for producing a silicon carbide body, includes the steps of forming a silicon carbide mass by chemical vapor deposition, and thermally treating the silicon carbide mass under vacuum or in an inert gas atmosphere at a temperature not less than 2000° C., the silicon carbide article having an electric resistivity higher than that of the silicon carbide mass having not been thermally treated.