The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2002

Filed:

Mar. 27, 2000
Applicant:
Inventors:

Kil Sung Lee, Seoul, KR;

Jae Seok Lee, Euiwang-Shi, KR;

Seok Jin Kim, Seoul, KR;

Tu Won Chang, Taejon-Shi, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 3/14 ; C01B 3/312 ; C01B 1/314 ; C01F 7/02 ; C01F 1/700 ;
U.S. Cl.
CPC ...
C09K 3/14 ; C01B 3/312 ; C01B 1/314 ; C01F 7/02 ; C01F 1/700 ;
Abstract

Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.


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