The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2002

Filed:

Jul. 19, 1999
Applicant:
Inventors:

Akihito Kurosaka, Tokyo, JP;

Osamu Nakao, Tokyo, JP;

Takanao Suzuki, Tokyo, JP;

Masahiro Sato, Tokyo, JP;

Hitoshi Nishimura, Tokyo, JP;

Assignee:

Fujitsu Ltd., , JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 9/12 ;
U.S. Cl.
CPC ...
G01L 9/12 ;
Abstract

A capacitance pressure sensor that prevents leakage from outside the sensor to the reference pressure cavity, has a structure that can decrease defects due to leakage compared to conventional technology. An electrode comprising a thin metallic layer is formed on the upper surface of a glass substrate that forms one of the substrates of a pressure sensor and an external electrode is formed on the surface edge of the substrate. In addition, in the region where the silicon substrate is bonded, a feedthrough extending from the electrode to the external electrode is formed, and spine shaped layers with three braches for blocking leakage gas are formed perpendicularly to the feedthrough.


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