Field effect transistor with organic semiconductor layer

Abstract

The integrated circuit ( ) suppresses leakage currents, which usually take place between neighboring transistors ( ) through the unpatterned semiconductor layer ( ). In its first layer ( ), the circuit ( ) comprises electrically conductive tracks ( ) which are in contact with the semiconductor layer ( ), some of which tracks ( ) are in use as source and drain electrodes ( ) and are preferably fork-shaped and interdigitated. The suppression of leakage currents is achieved by putting neighboring electrodes ( ) in different transistors ( ) at the same voltage and by excluding the presence of any other electrically conductive tracks between those neighboring electrodes ( ). Interconnect lines ( ) carrying input or output signals are positioned in a second layer ( ) as much as possible, which second layer ( ) comprises electrically conductive tracks ( ) and is not in contact with the semiconductor layer ( ). The integrated circuit ( ) of the invention is very well fitted to contain arrays of NAND structures.