The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Nov. 22, 1995
Mark R. Simpson, White Plains, NY (US);
Philips Electronics North America Corporation, New York, NY (US);
Abstract
A nonvolatile memory cell of the type having a single lateral transistor includes source and drain regions separated by a channel region. A floating gate is provided over at least the channel region and is separated therefrom by a gate oxide, with a control gate over the floating gate and insulated therefrom. By having the floating gate extend over substantially its entire length at a substantially constant distance from the surface of the device, and providing the floating gate and the surface with similarly-contoured corners adjacent ends of the source and drain regions alongside the channel region, the nonvolatile memory cell can be programmed and erased using lower voltages than those required by priorart devices.