The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2002

Filed:

Mar. 05, 1999
Applicant:
Inventors:

Kipp J. Schoen, Fort Collins, CO (US);

Jason P. Henning, Lafayette, IN (US);

Jerry M. Woodall, New Haven, CT (US);

James A. Cooper, Jr., West Lafayette, IN (US);

Michael R. Melloch, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10312 ;
U.S. Cl.
CPC ...
H01L 3/10312 ;
Abstract

A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a mesa defined between adjacent ones of the trenches, and a Schottky contact having a relatively high barrier height at the bottom of each trench. The same metal used for the Schottky contact in each trench is deposited over the Schottky contact on the mesa. A simplified fabrication process is disclosed in which the high barrier height metal is deposited over the low barrier height metal and then used as an etch mask for reactive ion etching of the trenches to produce a self-aligned low barrier contact.


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