The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2002
Filed:
Aug. 16, 2000
Applicant:
Inventors:
Gary Dabbaugh, Berkeley Heights, NJ (US);
Gerald W. Gibson, Jr., Orlando, FL (US);
Troy A. Giniecki, Bethlehem, PA (US);
Kurt G. Steiner, Orlando, FL (US);
Assignee:
Agere Systems Guardian Corp., Orlando, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
The present invention provides a method of fabricating a self-aligning contact opening comprising: (a) forming a dielectric layer over a semiconductor substrate and gate electrodes located on the semiconductor substrate, (b) forming a carbide liner over the dielectric layer, and (c) etching at least a portion the carbide liner to form a self-aligning contact opening between the gate electrodes.
Dabbaugh, Gary. (2002). Hydrogenated silicon carbide as a liner for self-aligning contact vias (U.S. Patent No. 6362094). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6362094
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile