The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2002

Filed:

Dec. 14, 1999
Applicant:
Inventor:

Byung Sun Park, Yusong-Ku Daejeon, KR;

Assignee:

Havit Co., Ltd., Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1473 ;
U.S. Cl.
CPC ...
H01L 2/1473 ;
Abstract

There is a provided a method for fabricating a grating pattern, including the steps of: coating an SOG solution on a glass substrate by spin coating method; heat-treating the SOG thin film coated on the glass substrate, to form a silicon oxide layer; coating a photoresist on the silicon oxide layer and exposing the photoresist layer by masking process; developing the exposed photoresist layer and wet-etching the silicon oxide layer; and developing the photoresist layer used as a mask. According to the present invention, the grating pattern can be fabricated without etching the glass substrate, and high-quality products at a low cost is accomplished since the present invention does not require the expensive sputtering apparatus. Furthermore, the step-shape oxide layer pattern can be obtained through one-time wet etching since the multilevel oxide layer is easily formed.


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