The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2002

Filed:

Oct. 06, 1999
Applicant:
Inventor:

Akio Tanaka, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract

A semiconductor device having a large bias component detects a faint signal component on the bias component, includes a first bias circuit with a reference resistance connected to a measuring resistance group and having the same resistance temperature coefficient as the measuring resistance, a second bias circuit provided with a reference resistance being connected to a cancel resistance and having the same resistance temperature coefficient as the cancel resistance, and a third bias circuit provided with a reference resistance being connected to a correction resistance and having the same resistance temperature coefficient as the correction resistance. The first bias circuit is for applying the output voltage to the measuring resistance group; the second bias circuit is for applying the output voltage to the cancel resistance; and the third bias circuit is for applying the output voltage to the correction resistance.


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