The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Feb. 15, 2000
Applicant:
Inventors:
Yih-Feng Chyan, Orlando, FL (US);
Chung Leung, Orlando, FL (US);
Assignee:
Agere Systems Guardian Corp., Orlando, FL (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/1331 ;
Abstract
A BiCMOS semiconductor device and a method of forming same are disclosed. A bipolar transistor region is formed adjacent a CMOS device region within a semiconductor substrate. Carbon is implanted in an amount ranging from about 10 to about 10 cm before forming the base, emitter and collector within the bipolar transistor region to aid in suppressing transient enhanced diffusion. The bipolar transistor region is subject to rapid thermal annealing to aid in suppressing the transient enhanced diffusion.