The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Dec. 19, 2000
Akihiko Kobayashi, Chiba Prefecture, JP;
Katsutoshi Mine, Chiba Prefecture, JP;
Takashi Nakamura, Chiba Prefecture, JP;
Motoshi Sasaki, Chiba Prefecture, JP;
Kiyotaka Sawa, Chiba Prefecture, JP;
Dow Corning Toray Silicone Co., Ltd., Tokyo, JP;
Abstract
A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.