The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jan. 20, 1999
Yasuo Yamaguchi, Hyogo-ken, JP;
Tadashi Nishimura, Hyogo-ken, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a MOS-type field effect transistor (SOI-MOSFET) formed on a thin silicon layer on an insulator layer. The SOI-MOSFET has a gate overlap-type LDD structure in which additional source/drain regions having an impurity concentration of 3×10 to 3×10 /cm overlapping with a gate electrode are provided in the silicon layer. According to this structure, when the SOI-MOSFET is on operation, only the additional source/drain regions are depleted, so that it is possible to obtain satisfactory transistor characteristics. Additional source/drain regions in this structure are formed by combination of vertical ion implantation using the gate electrode as a mask and thermal diffusion or oblique ion implantation using the gate electrode as a mask.