The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Oct. 23, 2000
Byung Kee Lee, Daejeon Kwangyeok-si, KR;
Yang Il Jung, Daejeon Kwangyeok-si, KR;
Ho Yong Lee, Choongchungnam-do, KR;
Suk-Joong Kang, Daejeon Kwangyeok-si, KR;
Sung Yoon Chung, Seoul, KR;
Korea Advanced Institute of Science and Technology, Kwangyeok-Si, KR;
Abstract
A method for making a BaTiO -based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO -based body is subjected to a pre-heat treatment in a hydrogen (H ) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen=5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO . By virtue of the reducing average grain size of BaTiO , a BaTiO -based dielectric having a high dielectric constant and a low dielectric loss is obtained. This method provides an advantage in that it is possible to make a BaTiO -based dielectric having a very small average grain size while having a high relative density in accordance with a simple heat treatment conducted for pure BaTiO or even for BaTiO added with an additive in a reducing atmosphere at a temperature less than a liquid phase forming temperature, prior to a sintering process for sintering the BaTiO .