The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Nov. 18, 1999
Fengyuan Yang, Baltimore, MD (US);
Kai Liu, San Diego, CA (US);
Chia-Ling Chien, Lutherville, MD (US);
Peter C. Searson, Stevenson, MD (US);
The Johns Hopkins University, Baltimore, MD (US);
Abstract
The invention is directed to the use of electrochemical deposition to fabricate thin films of a material (e.g., bismuth) exhibiting a superior magnetoresistive effect. The process in accordance with a preferred embodiment produces a thin film of bismuth with reduced polycrystallinization and allows for the production of single crystalline thin films. Fabrication of a bismuth thin film in accordance with a preferred embodiment of the invention includes deposition of a bismuth layer onto a substrate using electrochemical deposition under relatively constant current density. Preferably, the resulting product is subsequently exposed to an annealing stage for the formation of a single crystal bismuth thin film. The inclusion of these two stages in the process produces a thin film exhibiting superior MR with a simple field dependence in the process suitable for a variety of field sensing applications.