The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jun. 29, 1999
Seiji Muranaka, Tokyo, JP;
Itaru Kanno, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The resist residue removal method removes resist residues caused at the time of formation of an aluminum wiring pattern on a semiconductor wafer. The method includes the steps of removal fluid processing, washing, and drying. The method involves forming an atmosphere within a chamber, which houses a semiconductor wafer having an exposed aluminum wiring pattern, by controlling gas flow into the chamber according to the processing step being performed. By the resist residue removal method, yield of a wiring pattern is improved by prevention of local etching of an aluminum wiring pattern, or by prevention of thinning of the aluminum wiring pattern.