The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
Jun. 07, 2000
Applicant:
Inventors:
Kiyohiko Sakakibara, Hyogo, JP;
Susumu Takeuchi, Hyogo, JP;
Makoto Yamamoto, Hyogo, JP;
Kunio Tani, Hyogo, JP;
Yukio Nakamoto, Hyogo, JP;
Tomohisa Iba, Hyogo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/606 ;
U.S. Cl.
CPC ...
G11C 1/606 ;
Abstract
A nonvolatile semiconductor memory device selects a bit line while a word line is in a non-selected state, and self-selectively writes back only a cell in an overerased state on the selected bit line. The nonvolatile semiconductor memory device performs this write-back operation after completion of erase verification. At this time, current sensitivity of a sense current amplifier defining the threshold of a memory cell is set in view of an off-state leakage current of a memory cell transistor.