The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
Nov. 28, 2000
Ikuo Kurachi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A pulse voltage with its frequency set at approximately 1 MHz and achieving a level of approximately 1V on the high level side and a level of −5˜−7V on the low level side is applied to the P-type well When 1V is applied to a P-type well the resulting forward bias causes electrons to be injected from a source and a drain into the channel (P-type well ) (a). As the voltage applied to the P-type well changes to −5 V, a depletion layer is formed at the channel. At the depletion layer the electrons are accelerated toward a tunnel oxide film (b). The electrons having been accelerated in the channel are injected into the tunnel oxide film are allowed to move inside the tunnel oxide film by the electrical field at the tunnel oxide film and are finally trapped at a floating gate Thus, a semiconductor memory system that makes it possible to reduce the size of the memory cells, prevents erroneous data write/read and achieves a reduction in power consumption is provided.