The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
Jun. 23, 2000
Applicant:
Inventor:
Kee-Jong Kim, Anyang-shi, KR;
Assignee:
LG. Philips LCD Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract
A method for manufacturing a thin film transistor includes the step of forming a protective layer for protecting source and drain metal lines during a cleaning process. The protective layer is preferably made of silicon nitride and preferably has a thickness of less than about 2000 angstroms.
Kim, Kee-Jong. (2002). Thin film transistor for protecting source and drain metal lines (U.S. Patent No. 6355956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6355956
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile