The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2002
Filed:
Aug. 11, 2000
Edward Chan, New Providence, NJ (US);
Harold Alexis Huggins, Watchung, NJ (US);
Jungsang Kim, Basking Ridge, NJ (US);
Hyongsok Soh, Basking Ridge, NJ (US);
Agere Systems Guartian Corp., Orlando, FL (US);
Abstract
A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator.