The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Jun. 29, 2000
Mitsuaki Ootani, Tokyo, JP;
Yoshiyuki Wasada, Tokyo, JP;
Nobuyuki Yamazaki, Tokyo, JP;
Yasushi Inoue, Tokyo, JP;
Takeshi Nakayama, Tokyo, JP;
Junichi Shimamura, Tokyo, JP;
Yuji Ebinuma, Tokyo, JP;
Takayuki Tsukamoto, Tokyo, JP;
Taiyo Yuden Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a switching circuit and an electronic switching component having a switching semiconductor device to perform switching between a conducting state and a non-conducting state of a conducting path to thereby reduce the power loss thereof and a control method thereof. In the present invention, at least two FETs and wherein the FET has a faster switching time and the FET has a lower ON resistance. Active terminals (drains and sources) of the FETs and are connected to each other in parallel. By employing these FETs and the conversion between an ON-state and an OFF-state of the conducting path is performed. In converting from the non-conducting state to the conducting state, the control circuit first turns on the FET and then turns on the FET when if a voltage between terminals of the FET reaches around a saturation value thereof. In converting from the conducting state to the non-conducting state, the control circuit first turns off the FET and then turns off the FET when if a voltage between terminals of the FET reaches around a saturation value thereof.