The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2002

Filed:

Nov. 23, 1998
Applicant:
Inventors:

Robert Hannon, Wappingers Falls, NY (US);

Subramanian S. Iyer, Mt. Kisco, NY (US);

Scott R. Stiffler, Amenia, NY (US);

Kevin R. Winstel, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ; H01L 2/900 ;
Abstract

A semiconductor device structure including a substrate including at least one silicon-on-insulator substrate region and at least one non-silicon-on-insulator region. The at least one silicon-on-insulator region and at least one non-silicon-on-insulator region are formed in a pattern in the substrate. At least one trench is arranged in the vicinity of at least at a portion of a boundary between a silicon-on-insulator substrate region and the non-silicon-on-insulator substrate region. The at least one trench is arranged in at least one of the silicon-on-insulator region and the non-silicon-on-insulator region.


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