The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Apr. 05, 1999
Kaizad Rumy Mistry, Acton, MA (US);
Lawrence Allen Bair, Littleton, MA (US);
Compaq Computer Corporation, Houston, TX (US);
Abstract
An improved MOSFET transistor is disclosed having a high dielectric constant gate dielectric and a metal gate electrode. With such a procedure, the known problems with polysilicon gate electrodes on very thin gate oxide transistors are greatly improved, resulting in improved gate threshold voltage control and improved transistor electrical properties, without loss of the benefit of self aligned source and drain electrodes available with polysilicon gates. Dual metal gate electrodes are also disclosed and exhibit improved CMOS transistor function compared to polysilicon gates, resulting in better and more controlled transistor properties. Thus the metal Damascene gate process results in faster and more consistent MOS and CMOS transistors and improved IC fabrication.