The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2002

Filed:

Jul. 19, 2000
Applicant:
Inventor:

Seiichi Matsumoto, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/904 ;
U.S. Cl.
CPC ...
H01L 2/904 ;
Abstract

In a thin film transistor array, on a transparent insulating substrate made of glass or the like, a plurality of scanning lines is formed of a first conductive film. A plurality of signal lines is formed of a second conductive film and pixel electrodes are formed on a gate insulating film in a region enclosed with adjacent scanning lines and adjacent signal lines. Thin film transistors are coupled to the pixel electrodes, and light shielding films are formed of the first conductive film and form light shielding overlap portions with peripheral portions facing the signal lines of respective pixel electrodes via the gate insulating film. The light shielding film has portions near the both ends thereof along the signal line projected toward a side of the signal line to form correction overlap portions which overlap the signal lines via the gate insulating film. This allows a correction of an interruption in the signal lines to be effectuated without increasing load to the process and without adversely affecting display.


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