The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Sep. 23, 1999
Victor C. Sutcliffe, Frisco, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
In one embodiment, the present invention provides a method of forming a dynamic random access memory device which utilizes self-aligned contact pads and for the bit line and storage node contacts. A transfer gate 14 is formed at the fact of a semiconductor region . The semiconductor includes a bit line contact region and storage node contact region adjacent opposite edges of the transfer gate . Transfer gate is surrounded with an insulating material . A conductive layer is formed over the transfer gate , over the bit line contact region and over the storage node contact region. This conductive layer is then etched so that a first portion of the conductive layer provides an electrical contact to the bit line contact region and a second portion of the conductive layer provides an electrical contact to the storage node contact region. The bit line and storage node electrode can then be formed in electrical contact with the first and second portions of the conductive layer and , respectively.