The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Mar. 25, 1999
Applicant:
Inventors:
Louis N. Hutter, Richardson, TX (US);
Peter Ying, Plano, TX (US);
Marco Corsi, Plano, TX (US);
Imran Khan, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ; H01L 2/18249 ; H01L 2/18228 ; H01L 2/1331 ;
U.S. Cl.
CPC ...
H01L 2/18238 ; H01L 2/18249 ; H01L 2/18228 ; H01L 2/1331 ;
Abstract
A method for fabricating a BiCMOS integrated circuit. The method includes the steps of forming in a single implantation step a base region of a bipolar transistor and a p-well of an n-channel MOS transistor; and forming in a single implantation step a collector contact well of a bipolar transistor and an n-well of a p-channel MOS transistor.