The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2002
Filed:
Dec. 22, 2000
Kee Jeung Lee, Seoul, KR;
Dong Jun Kim, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
The present invention discloses a method for fabricating a capacitor for a semiconductor device. The method includes the steps of: forming a lower electrode at the upper portion of a semiconductor substrate where a predetermined structure has been formed; forming an amorphous (Ta O ) —(TiO ) film on the lower electrode; performing a thermal treatment on the amorphous (Ta O ) —(TiO ) film; and forming an upper electrode on the amorphous (Ta O ) —(TiO ) film. A capacitance for the operation of a high integration device is sufficiently obtained by using the (Ta O ) —(TiO ) film having a high dielectric constant, thereby fabricating the capacitor suitable for the high integration semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile