The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Jun. 18, 1999
Applicant:
Inventor:
Masayoshi Tsuji, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1107 ;
U.S. Cl.
CPC ...
H01L 3/1107 ;
Abstract
In an avalanche photodiode having a separated electron injection type light absorbing layer/multiplication layer structure, the multiplication layer comprises In Al Ga As with the composition thereof being graded from InAlAs on the light absorbing layer side to InGaAs and preferably has a thickness of not more than 0.1 &mgr;m. By virtue of the above construction, very low noise characteristics and ultraspeed characteristics can be attained in photodetectors at 1 &mgr;m wavelength for long distance optional communications.