The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Apr. 21, 1999
Applicant:
Inventor:
Ryo Saeki, Ichikawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01L 2/9205 ; H01L 2/9207 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01L 2/9205 ; H01L 2/9207 ;
Abstract
In a semiconductor light emitting element using InGaAlP semiconductors, reduced in operative voltage and increased in optical output, a contact layer doped with a predetermined amount of carbon is provided to reduce the contact resistance at the contact with an ITO electrode because carbon does not readily diffuse like zinc and does not deteriorate the element characteristics. An intermediate band gap layer having an intermediate band gap between those of a contact layer and a cladding layer may be interposed between these layers to alleviate band discontinuity between their valence bands, thereby promote inflow of holes and decrease the element resistance.