The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Mar. 28, 1995
Applicant:
Inventor:
Livio Baldi, Agrate Brianza, IT;
Assignee:
SGS-Thomson Microelectronics, S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method of forming high-stability metallic contacts in an integrated circuit with one or more metallized layers wherein, after a preliminary step of providing contact holes in a layer of dielectric material: a prebarrier layer of Ti or TiN is formed overall; a layer of tungsten is formed by chemical vapor deposition so as to coat the bases and the walls of the contact holes uniformly; aluminum or an alloy thereof is sputter-deposited, under high-temperature low-flux conditions, to fill the contact holes; and patterning the aluminum and tungsten layers to form metallic interconnections of predetermined geometry.