The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Jan. 31, 2001
Applicant:
Inventor:
Masato Sakao, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A plurality of charge storage electrodes are formed on an interlayer insulating film which is formed on a silicon substrate. A plurality of insulating members which surround periphery of the charge storage electrodes and which are separated from each other are formed. A capacitance insulating film is so formed as to cover the plurality of charge storage electrodes and the plurality of insulating members. A plate electrode is formed on the capacitance insulating film. The insulating members are formed of a silicon nitride film which has a function as an etching stopper for protecting the interlayer insulating film.